Abstract
A single phase polycrystalline β-FeSi2 layer has been synthesized at the near surface region by implantation in Si(1 0 0) of a high fluence (∼1017 atoms/cm2) of 50 keV Fe ions and subsequent thermal annealing in vacuum at 800 °C. The depth profile of the implanted Fe atoms in Si(1 0 0) were simulated by the widely used transportation of ions in matter (TRIM) computer code as well as by the dynamic transportation of ions in matter code (T-DYN). The simulated depth profile predictions for this heavy ion implantation process were experimentally verified using Rutherford Backscattering Spectrometry (RBS) and X-ray Photoelectron Spectroscopy (XPS) in combination with Ar-ion etching. The formation of the β-FeSi2 phase was monitored by X-ray diffraction measurements. The T-DYN simulations show better agreement with the experimental Fe depth profile results than the static TRIM simulations. The experimental and T-DYN simulated results show an asymmetric distribution of Fe concentrated more toward the surface region of the Si substrate.
Original language | English |
---|---|
Pages (from-to) | 33-36 |
Number of pages | 4 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 332 |
DOIs | |
Publication status | Published or Issued - 1 Aug 2014 |
Externally published | Yes |
Keywords
- Ion implantation
- RBS
- T-DYN
- TRIM
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation