Depth profile investigation of β-FeSi2 formed in Si(1 0 0) by high fluence implantation of 50 keV Fe ion and post-thermal vacuum annealing

Wickramaarachchige J. Lakshantha; Venkata C. Kummari; Tilo Reinert; Floyd D. McDaniel; Bibhudutta Rout

doi:10.1016/j.nimb.2014.02.024

Depth profile investigation of β-FeSi₂ formed in Si(1 0 0) by high fluence implantation of 50 keV Fe ion and post-thermal vacuum annealing

Wickramaarachchige J. Lakshantha, Venkata C. Kummari, Tilo Reinert, Floyd D. McDaniel, Bibhudutta Rout

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A single phase polycrystalline β-FeSi₂ layer has been synthesized at the near surface region by implantation in Si(1 0 0) of a high fluence (∼10¹⁷ atoms/cm²) of 50 keV Fe ions and subsequent thermal annealing in vacuum at 800 °C. The depth profile of the implanted Fe atoms in Si(1 0 0) were simulated by the widely used transportation of ions in matter (TRIM) computer code as well as by the dynamic transportation of ions in matter code (T-DYN). The simulated depth profile predictions for this heavy ion implantation process were experimentally verified using Rutherford Backscattering Spectrometry (RBS) and X-ray Photoelectron Spectroscopy (XPS) in combination with Ar-ion etching. The formation of the β-FeSi₂ phase was monitored by X-ray diffraction measurements. The T-DYN simulations show better agreement with the experimental Fe depth profile results than the static TRIM simulations. The experimental and T-DYN simulated results show an asymmetric distribution of Fe concentrated more toward the surface region of the Si substrate.

Original language	English
Pages (from-to)	33-36
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	332
DOIs	https://doi.org/10.1016/j.nimb.2014.02.024
Publication status	Published or Issued - 1 Aug 2014
Externally published	Yes

Keywords

Ion implantation
RBS
T-DYN
TRIM

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/j.nimb.2014.02.024

Cite this

Lakshantha, W. J., Kummari, V. C., Reinert, T., McDaniel, F. D., & Rout, B. (2014). Depth profile investigation of β-FeSi₂ formed in Si(1 0 0) by high fluence implantation of 50 keV Fe ion and post-thermal vacuum annealing. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 332, 33-36. https://doi.org/10.1016/j.nimb.2014.02.024

@article{7b3caa27a1e74b2fbddd5907b15d9272,

title = "Depth profile investigation of β-FeSi2 formed in Si(1 0 0) by high fluence implantation of 50 keV Fe ion and post-thermal vacuum annealing",

abstract = "A single phase polycrystalline β-FeSi2 layer has been synthesized at the near surface region by implantation in Si(1 0 0) of a high fluence (∼1017 atoms/cm2) of 50 keV Fe ions and subsequent thermal annealing in vacuum at 800 °C. The depth profile of the implanted Fe atoms in Si(1 0 0) were simulated by the widely used transportation of ions in matter (TRIM) computer code as well as by the dynamic transportation of ions in matter code (T-DYN). The simulated depth profile predictions for this heavy ion implantation process were experimentally verified using Rutherford Backscattering Spectrometry (RBS) and X-ray Photoelectron Spectroscopy (XPS) in combination with Ar-ion etching. The formation of the β-FeSi2 phase was monitored by X-ray diffraction measurements. The T-DYN simulations show better agreement with the experimental Fe depth profile results than the static TRIM simulations. The experimental and T-DYN simulated results show an asymmetric distribution of Fe concentrated more toward the surface region of the Si substrate.",

keywords = "Ion implantation, RBS, T-DYN, TRIM",

author = "Lakshantha, {Wickramaarachchige J.} and Kummari, {Venkata C.} and Tilo Reinert and McDaniel, {Floyd D.} and Bibhudutta Rout",

year = "2014",

month = aug,

day = "1",

doi = "10.1016/j.nimb.2014.02.024",

language = "English",

volume = "332",

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Lakshantha, WJ, Kummari, VC, Reinert, T, McDaniel, FD & Rout, B 2014, 'Depth profile investigation of β-FeSi₂ formed in Si(1 0 0) by high fluence implantation of 50 keV Fe ion and post-thermal vacuum annealing', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 332, pp. 33-36. https://doi.org/10.1016/j.nimb.2014.02.024

Depth profile investigation of β-FeSi₂ formed in Si(1 0 0) by high fluence implantation of 50 keV Fe ion and post-thermal vacuum annealing. / Lakshantha, Wickramaarachchige J.; Kummari, Venkata C.; Reinert, Tilo et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 332, 01.08.2014, p. 33-36.

Research output: Contribution to journal › Article › peer-review

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T1 - Depth profile investigation of β-FeSi2 formed in Si(1 0 0) by high fluence implantation of 50 keV Fe ion and post-thermal vacuum annealing

AU - Lakshantha, Wickramaarachchige J.

AU - Kummari, Venkata C.

AU - Reinert, Tilo

AU - McDaniel, Floyd D.

AU - Rout, Bibhudutta

PY - 2014/8/1

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N2 - A single phase polycrystalline β-FeSi2 layer has been synthesized at the near surface region by implantation in Si(1 0 0) of a high fluence (∼1017 atoms/cm2) of 50 keV Fe ions and subsequent thermal annealing in vacuum at 800 °C. The depth profile of the implanted Fe atoms in Si(1 0 0) were simulated by the widely used transportation of ions in matter (TRIM) computer code as well as by the dynamic transportation of ions in matter code (T-DYN). The simulated depth profile predictions for this heavy ion implantation process were experimentally verified using Rutherford Backscattering Spectrometry (RBS) and X-ray Photoelectron Spectroscopy (XPS) in combination with Ar-ion etching. The formation of the β-FeSi2 phase was monitored by X-ray diffraction measurements. The T-DYN simulations show better agreement with the experimental Fe depth profile results than the static TRIM simulations. The experimental and T-DYN simulated results show an asymmetric distribution of Fe concentrated more toward the surface region of the Si substrate.

AB - A single phase polycrystalline β-FeSi2 layer has been synthesized at the near surface region by implantation in Si(1 0 0) of a high fluence (∼1017 atoms/cm2) of 50 keV Fe ions and subsequent thermal annealing in vacuum at 800 °C. The depth profile of the implanted Fe atoms in Si(1 0 0) were simulated by the widely used transportation of ions in matter (TRIM) computer code as well as by the dynamic transportation of ions in matter code (T-DYN). The simulated depth profile predictions for this heavy ion implantation process were experimentally verified using Rutherford Backscattering Spectrometry (RBS) and X-ray Photoelectron Spectroscopy (XPS) in combination with Ar-ion etching. The formation of the β-FeSi2 phase was monitored by X-ray diffraction measurements. The T-DYN simulations show better agreement with the experimental Fe depth profile results than the static TRIM simulations. The experimental and T-DYN simulated results show an asymmetric distribution of Fe concentrated more toward the surface region of the Si substrate.

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